Ngo-2020, ukuthengiswa kwe-gallium nitride(I-GaN) itekhnoloji yokutshaja ngokukhawuleza ingene ngokusesikweni kwindlela ekhawulezayo, ngakumbi ngokufika kokutshaja okukhawulezileyo kombane okhawulezayo wemveliso yedijithali kunye nokufika kwexesha le-5G, uphuhliso lwetekhnoloji ye-gallium nitride kwicandelo lonikezelo lombane lwabathengi lufana neentlanzi amanzi, kunye nomthamo wentengiso ukhula ngokukhawuleza.
Ugqabhuko-dubulo lwemalike yokutshaja ngokukhawuleza ye-gallium nitride akuzisanga utshintsho kuphela kwimakethi yezixhobo zamandla, kodwa kukhuthaze nophuhliso lobuchwepheshe bolawulo lwe-GaNFET.Okwangoku, inani leenkampani ezinamandla ze-chip ziye zavela ekhaya nakwamanye amazwe, kwaye ziqalise abalawuli be-gallium nitride.
I-Gallium nitride (i-GaN) yimpahla ye-semiconductor yesizukulwana esilandelayo.Isantya sokusebenza kwayo sikhawuleza kangangezihlandlo ezingama-20 kunetekhnoloji yakudala yesilicon (Si), kwaye inokufikelela ngokuphindwe kathathu amandla aphezulu xa isetyenziswa kwimveliso yetshaja ekhawulezayo., Unokufezekisa ukusebenza kude ngaphaya kweemveliso ezikhoyo, kwimeko yobukhulu obufanayo, amandla okuphuma anyuswa ngamaxesha amathathu.
Amandla aphezulu, ubungakanani obuncinci, kunye nokusebenza okuphezulu kuye kwaba yeyona ndlela iphambili yophuhliso lweemveliso zamandla omthengi.Ngokungena kwabenzi bezixhobo zamandla egallium nitride ezininzi kunye nokuphuculwa kobuchwepheshe bemveliso, iindleko zokuphuhlisa i-gallium nitride ukutshaja ngokukhawuleza ziyehla ngokuthe ngcembe.Kuqikelelwa ukuba iindleko zezixhobo zamandla ze-GaN ziya kuba ngaphantsi kwezixhobo zamandla e-silicon esele zikhona emva kowama-2021.
Phantsi kwalo mkhwa, sikwaphehlelele uthotho lweemveliso zokutshaja ngokukhawuleza ukuhlangabezana neemfuno ezikhulayo zabathengi.Sinemodeli entsha emininzi kunye nesimbo esitsha se-gallium nitride(GaN）itshaja ekhawulezayo ngexabiso elikhuphisanayo.Wamkelekile ukubonisana kwaye ubeke iiodolo.
Ixesha lokuposa: Jan-22-2021